PART |
Description |
Maker |
Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH400 SFH401 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
GN04042N |
GaAs device - GaAs MMICs - Switch GaAs设备-砷化镓微波集成电开
|
Infineon Technologies AG Panasonic
|
LD267 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays
|
Siemens Semiconductor G...
|
SBB-5089Z SBB-5089 |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫,级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. http:// ETC[ETC]
|
TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
Q62703-Q1031 LD274 Q62703-Q1820 LD274-2 LD274-3 Q6 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器 Ternary PIN Photodiode in TO-Package with Integrated Optics From old datasheet system
|
SIEMENS A G Infineon Technologies AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
GN04022N |
GaAs device - GaAs MMICs - Switch
|
Panasonic
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|